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Postdoctoral Position – Photons and charge carriers confinement in GeSn based materials for CMOS compatible lasers.
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Published: 1 year ago
Application deadline: Unspecified
Location: Grenoble, France
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Postdoctoral Position – Photons and charge carriers confinement in GeSn based materials for CMOS compatible lasers.

Integrated laser sources compatible with microelectronic technologies is currently one of the main challenges for silicon photonics. This year, researchers showed for the first time that germanium tin can be used to obtain optically pumped laser sources at low temperature. The project aim is to go towards lasing at room temperature in fully relaxed or tensile-strained heterostructures and quantum wells made of germanium tin alloys. Carrier confinement optimisation in order to reach high gain is the major issue of this study. We would indeed like to minimize the lasing threshold and obtain continuous emission lasers. We also target a decrease the concentration of tin in germanium by focusing strain to further increase the crystalline quality of quantum wells and heterostructures and still reach direct band gap in the structures. Objectives of the research will be to find efficient geometries to confine electrons and holes, to apply tensile strain to germanium tin crystals, to evaluate the electrical gain dependence with different strains and doping levels, to characterise the optoelectronic properties of epitaxial materials, to design and fabricate laser cavities with strong optical confinement in order to reach tunable continuous germanium lasers compatible with the current microelectronic technologies.This position is open until it is filledDépartement d'Optronique (LETI)Laboratoire des Coposants Photonique sur CMOS (LCPC)PsD-DRT-15-0084vincent.reboud@cea.fr
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